Effects of asymmetric barriers on resonant tunnelling current
- 1 August 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (8) , 819-822
- https://doi.org/10.1088/0268-1242/3/8/016
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Results of elastic and inelastic electron tunneling through potential barriers in solidsPublished by Springer Nature ,2007
- Rectification Properties of Asymmetrical SuperlatticesJapanese Journal of Applied Physics, 1987
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBEJapanese Journal of Applied Physics, 1986
- Large room-temperature effects from resonant tunneling through AlAs barriersApplied Physics Letters, 1986
- Observation of a negative differential resistance due to tunneling through a single barrier into a quantum wellApplied Physics Letters, 1986
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Multibarrier tunneling in Ga1−xAlxAs/GaAs heterostructuresJournal of Applied Physics, 1983
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970