Effect of lattice defects in the collector region of npn Si transistors on the degradation ofhFE
- 16 May 1988
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 107 (1) , 429-439
- https://doi.org/10.1002/pssa.2211070146
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- X-ray photoelectron spectroscopy study of radiation-damaged Si-SiO2 interfacesJournal of Applied Physics, 1983
- Conparison of Neutron and 2 MeV Electron Damage in N-Type Silicon by Deep-Level Transient SpectroscopyIEEE Transactions on Nuclear Science, 1981
- Electron, Electron-Bremsstrahlung and Proton Depth-Dose Data for Space-Shielding ApplicationsIEEE Transactions on Nuclear Science, 1979
- Annealing of irradiation-induced defects in arsenic-doped siliconJournal of Applied Physics, 1977
- Electron-irradiation damage in antimony-doped siliconJournal of Applied Physics, 1977
- Electron-irradiation-induced divacancy in lightly doped siliconJournal of Applied Physics, 1976
- New Developments in Defect Studies in SemiconductorsIEEE Transactions on Nuclear Science, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974