Strained layer quantum well semiconductor optical amplifiers: Polarization insensitive amplification
- 1 October 1991
- journal article
- research article
- Published by Taylor & Francis in Fiber and Integrated Optics
- Vol. 10 (4) , 361-364
- https://doi.org/10.1080/01468039108201716
Abstract
Polarization insensitive optical amplification was demonstrated in newly developed semiconductor optical amplifiers that have strained GalnAsP quantum well structures. We tailored the active region of the quaternary strained layer quantum well structure with a small biaxially tensile strain of 0.2% in the well layers for polarization insensitive operation.Keywords
This publication has 2 references indexed in Scilit:
- 1.5μm band travelling-wave semiconductor optical amplifiers with window facet structureElectronics Letters, 1989
- Polarisation-insensitive, near-travelling-wave semiconductor laser amplifiers at 1.5 µmElectronics Letters, 1989