Low-voltage CMOS transconductancecell based on parallel operation oftriode and saturation transconductors
- 7 July 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (14) , 1124-1126
- https://doi.org/10.1049/el:19940756
Abstract
A new linearity improvement technique for CMOS triode transconductors is presented. The idea is based on the parallel operation of CMOS triode and saturation region transconductors. Simulation results indicate that 0.01% THD and linearity is possible with 800 mV peak-to-peak input differential signals and 1.5 V supply voltage.Keywords
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