Deep submicron transferred-substrate heterojunction bipolar transistors
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Using e-beam lithography and combined reactive-ion and wet-chemical etches, we have fabricated transferred-substrate heterojunction bipolar transistors (HBTs) with 0.2 μm emitter and 0.6 μm collector widths and a measured DC current gain of 14. Devices with 0.4 μm emitter and 1.0 μm collector widths obtain record 500 GHz f/sub max/ value.Keywords
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