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{332} Ga Habit Planes Formed on GaAs during Br2 : CH 3 OH Etching
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{332} Ga Habit Planes Formed on GaAs during Br2 : CH 3 OH Etching
{332} Ga Habit Planes Formed on GaAs during Br2 : CH 3 OH Etching
LK
L. A. Koszi
L. A. Koszi
DR
D. L. Rode
D. L. Rode
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1 December 1975
journal article
Published by
The Electrochemical Society
in
Journal of the Electrochemical Society
Vol. 122
(12)
,
1676-1680
https://doi.org/10.1149/1.2134108
Abstract
No abstract available
Cited
Cited by 8 articles
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