Electrical characteristics of silicon MOS structure formed by a novel low-temperature thermal oxidation method
- 2 January 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (1) , 35-36
- https://doi.org/10.1049/el:19860024
Abstract
Electrical characteristics of the native silicon-dioxide layer and its interface formed by a novel low-temperature thermal oxidation method have been evaluated. The resistivity and breakdown field strength were more than 1014 Ωcm and 4 MV/cm, respectively. The interface state density had a V-shaped distribution form and its minimum value was about 1011 cm2 eV.Keywords
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