Sputtering of thin films of Pb(ZrTi)O 3
- 1 August 1990
- journal article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 108 (1) , 15-20
- https://doi.org/10.1080/00150199008018726
Abstract
Pb(ZrTi)O3 thin films of some selected Zr/Ti-ratios were produced by reactive dc diode sputtering and rftriode sputtering respectively. Films, which were sputtered at substrate temperatures of about 1000 K show the typical ferroelectric behaviour. An additional effect with thin ferroelectric Pb(ZrTi)O3 films is that the morphotropic phase boundary is shifted to higher concentrations of zirconium in the solid solution.Keywords
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