Description of Damage Accumulation and Overlap in Ion Irradiated Solids
- 16 January 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 81 (1) , 267-272
- https://doi.org/10.1002/pssa.2210810129
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- A generalized overlap-damage model of amorphous phase and point defect generation during ion implantation into siliconRadiation Effects, 1982
- On the influence of atomic mixing on the evolution of ion-implantation profilesPhilosophical Magazine A, 1982
- The effects of annealing upon the accumulation of amorphousness in a composite model of disorder productionRadiation Effects, 1981
- The accumulation of amorphousness as a function of irradiation fluence in a composite model of disorder productionRadiation Effects, 1979
- Attachment of mobile particles to non-saturable trapsRadiation Effects, 1979
- Difficulties in deducing disordering mechanisms from experimental studies of disorder-ion fluence functions in ion irradiation of semiconductorsRadiation Effects, 1979
- Crystalline to amorphous transformation in ion-implanted silicon: a composite modelJournal of Applied Physics, 1978
- SynergeticsPublished by Springer Nature ,1978
- Vacancy creation by helium trapping at substitutional krypton in tungstenPhysica Status Solidi (a), 1977
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972