Reduction of backgating in GaAs/AlGaAs MESFETs by optimisation of active-layer/buffer-layer interface
- 26 April 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (9) , 376-378
- https://doi.org/10.1049/el:19840260
Abstract
Backgating measurements made on GaAs MESFETs with abrupt, graded alloy and graded superlattice interface AlGaAs buffer layers were compared to measurements made on conventional GaAs buffer-layer MESFETs. Only the superlattice interface structure showed a reduction in the backgating transconductance (by a factor of 24 compared to the GaAs buffer-layer FET). The lack of reduction in the backgating transconductance for the abrupt and graded alloy interface devices is attributed to traps resulting from GaAs growth on an AlGaAs layer.Keywords
This publication has 0 references indexed in Scilit: