Very high gain, high sensitivity, 40 GHz narrowbandphotoreceiver for clock recovery
- 5 February 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (3) , 297-299
- https://doi.org/10.1049/el:19980089
Abstract
A 40 GHz photoreceiver has been implemented by cascading on a single alumina substrate a fast side-illuminated AlGaInAs/InP pin photodiode, and three narrow-band amplifier chips, based on a 0.2 µm gate length GaAs pHEMT technology. The package was especially designed to suppress parasitic cavity-resonances. The photoreceiver current-gain is 57 dB, and the average input noise is < 30 pA/√Hz over the –3 dB bandwidth of 40.4 – 41.4 GHz. This is believed to be the highest photoreceiver gain ever reported in a single compact metal package at such a high frequency.Keywords
This publication has 1 reference indexed in Scilit:
- A V-band, high gain, low noise, monolithic PHEMT amplifier mounted on a small hermetically sealed metal packageIEEE Microwave and Guided Wave Letters, 1995