Biaxial stress effects on the TE/TM polarization switching of InGaAsP ridge-waveguide lasers
- 1 July 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 1 (7) , 162-165
- https://doi.org/10.1109/68.36025
Abstract
TE/TM (transverse electric/magnetic) polarization switching in ridge-waveguide InGaAsP lasers is analyzed with due considerations to biaxial stress effects on both the waveguiding and gain properties of the device. The conditions of switching for several models are established. In particular, the gain expression for uniaxial stress is extended to include biaxial stress, and the differences between the different models are presented.Keywords
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