Direct Microscopic Simulation of Gunn-Domain Phenomena

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Abstract
An elaboration of the Monte Carlo computation of hot‐electron states, such as to represent a time‐dependent ensemble, is applied to the study of the instabilities associated with negative differential conductance. A two‐band semiconductor model, approximately equivalent to GaAs, is used; and the instantaneous space‐charge field parallel to the applied field is included in the particle dynamics. Spontaneous Gunn domains, successively traveling from cathode to anode at the expected speed, are obtained. This method should be suitable for investigating the instability phenomena on space and time scales shorter than are appropriate for the macroscopic theories.

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