TEM, AES and XPS Studies of Si Layer on Buried SiO2 Layer Formed by High-Dose Oxygen Ion-Implantation
- 1 June 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (6)
- https://doi.org/10.1143/jjap.19.1111
Abstract
Depth distributions of crystallographic and chemical properties in oxygen ion-implanted Si layers have been studied by TEM, AES and XPS. Oxygen ions (16O+) were implanted into (100)-Si wafers at 150 keV to a dose of 1.2×1018/cm2. The dose rate was about 15 µA/cm2. The implanted oxygen forms a buried SiO2 layer after annealing. The Si layer on this buried SiO2 layer is not completely amorphized by implantation, and changes after annealing to a single crystal Si layer at the surface region and a deeper polycrystalline Si layer. A twin layer is formed at the interface region between these two layers. The polycrystalline Si layer consists of a mixture of Si and SiO2.Keywords
This publication has 5 references indexed in Scilit:
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- Nature and Annealing Behavior of Disorders in Ion Implanted SiliconJapanese Journal of Applied Physics, 1978
- A study of silicon oxides prepared by oxygen implantation into siliconJournal of Physics D: Applied Physics, 1977
- Thin SiO2 films formed by oxygen ion implantation in silicon: Electron microscope investigations of the Si-SiO2 interface structures and their c-v characteristicsThin Solid Films, 1976
- Formation of SiO2 Films by Oxygen-Ion BombardmentJapanese Journal of Applied Physics, 1966