Lateral growth of titanium silicide over a silicon dioxide layer
- 1 April 1983
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (4) , 2114-2115
- https://doi.org/10.1063/1.332265
Abstract
If a silicon dioxide step on a single crystal of silicon covered with titanium is annealed, then, following vertical growth on the silicon part, lateral growth of titanium silicide takes place over the oxide layer. In the temperature range 750–950 °C this lateral growth of Ti–silicide was found to be a linear function of the square root of the annealing time. The activation energy of the lateral growth was found to be 1.89 eV. During lateral growth the Ti–silicide forms a deep spike in the silicon crystal at the SiO2 step.This publication has 4 references indexed in Scilit:
- Lateral diffusion of Ni and Si through Ni2Si in Ni/Si couplesApplied Physics Letters, 1982
- Thin film interaction between titanium and polycrystalline siliconJournal of Applied Physics, 1980
- Solid state reactions in titanium thin films on siliconThin Solid Films, 1976
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975