COMPOSITE—A complete modeling program of silicon technology

• 1 October 1985
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 32  (10) , 1977-1986
• https://doi.org/10.1109/t-ed.1985.22230

Abstract

Keywords

• DOPING
• FABRICATION
• MATHEMATICAL MODEL
• OXIDATION
• ETCHING
• SILICON
• LITHOGRAPHY