On the Redistribution of Boron in the Diffused Layer during Thermal Oxidation

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Abstract
This work is concerned with the investigation of the impurity redistribution process in a two step p‐type diffusion. A simple theoretical model is formulated from which a closed form expression for the impurity profile is obtained. The experimental results verify the theoretical prediction of the profile. From these results, the segregation coefficient of boron at the oxide‐silicon interface is determined, and the total number of impurity atoms that have escaped into the oxide can also be estimated.

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