On the practical applications of MBE surface phase diagrams
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 49-54
- https://doi.org/10.1016/0022-0248(87)90363-0
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Summary Abstract: Layer-by-layer evaporation of GaAs (001)Journal of Vacuum Science & Technology B, 1985
- Surface Stoichiometry and Morphology of MBE Grown (001)GaAs through the Analysis of RHEED OscillationsJapanese Journal of Applied Physics, 1985
- Nucleation and strain relaxation at the InAs/GaAs(100) heterojunctionJournal of Vacuum Science & Technology B, 1983
- Effect of arsenic dimer/tetramer ratio on stability of III–V compound surfaces grown by molecular beam epitaxyJournal of Applied Physics, 1983
- Disorder on GaAs(001) surfaces prepared by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983
- Growth of III–V semiconductors by molecular beam epitaxy and their propertiesThin Solid Films, 1983
- Development of steps on GaAs during molecular beam epitaxyJournal of Vacuum Science and Technology, 1982
- Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and PJournal of the Electrochemical Society, 1980
- Bonding direction and surface-structure orientation on GaAs (001)Journal of Applied Physics, 1976
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971