ULTRAFAST RECOVERY OF ABSORPTION SATURATION IN GaAs / AlGaAs MULTIPLE QUANTUM WELLS

1 November 1987

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 48 (C5) , C5-267
https://doi.org/10.1051/jphyscol:1987557

Abstract

Band to band absorption in multiple quantum well structures at low temperature recovers in tens of picoseconds after its saturation by a large density of photoexcited carriers. Amplification of the spontaneous emission along the excited layers is at the origin of this short lifetime. Luminescence experiments confirm this interpretation

Keywords

ULTRAFAST RECOVERY
ALGAAS MULTIPLE
MULTIPLE QUANTUM
SATURATION
RECOVERY OF ABSORPTION

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