Large modulation depth, single-moded quantum well waveguide modulator operating around 1.57 μm

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Abstract
The performance of long wavelength single-mode waveguide modulators suitable for monolithic integration with a quantum well laser is reported. The device operated between 1.560 μm and 1.570 μm. The guiding layer was formed by a 0.27 μm quaternary layer at the centre of which were four 50 Å In0.53Ga0.47As quantum wells separated by 100 Å InP barriers. Lateral confinement was obtained by etching ridges in the top InP contact layer. For devices of 500 μm length, a modulation depth of 19 dB was obtained at a wavelength of 1.568 μm with a reverse bias voltage of only 3V and an internal loss of 2.5dB.