Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns
- 1 December 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (12) , 524-526
- https://doi.org/10.1109/edl.1984.26012
Abstract
Lateral current crowding effects on contact resistance measurements in four terminal resistor patterns are discussed by using a computer model based on a three-dimensional resistor network. The model is then applied to extrapolate the contact resistivity in n+, p+ silicon/titanium silicide interfaces. Values in agreement with the ones predicted by the field and thermionic field emission theory are obtained.Keywords
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