High-gain low-noise GaAlAs-GaAs phototransistors

12 May 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (10) , 394-395
https://doi.org/10.1049/el:19830272

Abstract

GaAlAs-GaAs heterojunction phototransistors designed for a high sensitivity have been fabricated. Very large current gains have been observed (over 10⁴), together with moderate input capacitances (about 5 pF). With these figures bipolar phototransistors appear as real candidates for low-noise large-bandwidth optical receivers; from signal/noise measurements on large devices, a minimum detectable power of −34.5 dBm at 0.82 μm was evaluated for a 140 Mbit/s data rate

Keywords

HETEROJUNCTION
OPTICAL RECEIVERS
LOW NOISE BIPOLAR DEVICE
INPUT CAPACITANCES
CURRENT GAINS
SIGNAL/NOISE MEASUREMENTS
140 MBIT/S DATA RATE
GAALAS-GAAS PHOTOTRANSISTORS
MINIMUM DETECTABLE POWER
SEMICONDUCTOR DEVICE FABRICATION
0.82 MICRON
III-V SEMICONDUCTORS

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