Response to ‘‘Comment on ‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’ ’’ [Appl. Phys. Lett. 5 5, 1689 (1989)]
- 16 October 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (16) , 1690
- https://doi.org/10.1063/1.102193
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxyApplied Physics Letters, 1988
- Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxyApplied Physics Letters, 1986