The growth of high mobility InGaAs and InAlAs layers by molecular beam epitaxy

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Abstract
InxGa1−xAs (x≊0.53) and InyAl1−yAs (y≊0.52) epitaxial layers have been grown on (100) InP substrates by molecular beam epitaxy (MBE) and characterized using x-ray diffraction and Hall measurements. Electron mobilities of 11 400 cm2/ V s at 300 K and 47 500 cm2/ V s at 77 K were measured on 1.5 μm thick undoped InGaAs grown directly on InP substrates. The background carrier concentrations of these unintentionally doped layers were typically in the low 1015 cm−3 range. Undoped InAlAs layers grown at 530 °C were n type. A typical 2 μm thick layer had a sheet carrier concentration of 7.5×1011 cm−2 and an electron mobility of 1350 cm2/ V s at room temperature. The Hall mobilities of both undoped InGaAs and InAlAs layers obtained in this work are among the highest ever obtained by MBE. The good quality of these layers is attributed to the slow growth rate employed and the cleanliness of the growth environment.

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