Comment: InP/Ga _0.47 In _0.53 As superlattice avalanche photodiode

• 27 October 1988
• journal article
• Published by Institution of Engineering and Technology (IET) in Electronics Letters
• Vol. 24  (22) , 1399
• https://doi.org/10.1049/el:19880957

Abstract

Keywords

• BAND STRUCTURE
• TUNNEL CURRENTS
• QUANTUM WELL STRUCTURE
• SUPERLATTICE AVALANCHE PHOTODIODE
• HIGH FIELD
• EFFECTIVE IONISATION RATE RATIO
• APD
• PHOTODETECTOR
• VOLTAGE DROP
• ELECTRIC FIELD
• INP-GA0.47IN0.53AS
• III-V SEMICONDUCTORS