Reduction of Al contamination in the GaAs layer of LPE-grown AlxGa1−xAs-GaAs heterostructures
- 30 April 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 28 (3) , 365-366
- https://doi.org/10.1016/0022-0248(75)90073-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Optical waveguides in GaAs–AlGaAs epitaxial layersJournal of Applied Physics, 1973
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971