CdS/CdTe thin-film solar cell with a zinc stannate buffer layer
- 1 January 1999
- proceedings article
- Published by AIP Publishing
- p. 37-41
- https://doi.org/10.1063/1.57910
Abstract
This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate ( Zn 2 SnO 4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zinc stannate films have a high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibit higher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO 2 -based and Cd 2 SnO 4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced.Keywords
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