The diffusion of zinc in gallium phosphide under excess phosphorus pressure from a ZnP2 source
- 31 May 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (5) , 423-426
- https://doi.org/10.1016/0038-1101(71)90194-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Zinc Diffusion into Gallium Phosphide under High and Low Phosphorus OverpressureJournal of the Electrochemical Society, 1969
- Space-Charge Capacitance of Asymmetric, Abrupt p-n JunctionsJournal of Applied Physics, 1967
- Electrical and Electroluminescent Properties of Gallium Phosphide DiffusedJunctionsPhysical Review B, 1966
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Diffusion and Solubility of Zinc in Gallium Phosphide Single CrystalsJournal of Applied Physics, 1964
- The solubilities and distribution coefficients of Zn in GaAs and GaPJournal of Physics and Chemistry of Solids, 1964
- Two crystal forms of ZnP2, their preparation, structure, and optoelectronic propertiesJournal of Physics and Chemistry of Solids, 1963
- Charge Multiplication in GaP p-n JunctionsJournal of Applied Physics, 1962
- Electroluminescence atp-nJunctions in Gallium PhosphideJournal of Applied Physics, 1961
- Diffusion of Donor and Acceptor Elements into GermaniumPhysical Review B, 1952