Selfdetection performance of active microstrip antenna

2 July 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (14) , 1362-1363
https://doi.org/10.1049/el:19920866

Abstract

Experimental results are presented for the (S + N)/N ratio of an active microstrip antenna operated as a selfoscillating detector. The antenna element uses a GaAs MESFET as the active device and is biased from a single sided DC supply (V_dc = 3.77V, 1_dc = 65mA). The element oscillates at 10.03GHz and produces approximately 4mW of radiated power. It is shown that the (S + N)/N ratio produced by the active element when operated as a selfoscillating detector varies nonlinearly between 6dB/30Hz and 60dB/30Hz for synthetically generated Doppler frequencies between 500 Hz and 20 kHz, respectively. The effect of bias voltage control on selfdetector performance is illustrated for a Doppler frequency of 1 kHz.

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