Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

Preprint

10 July 1999

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9907128

Abstract

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density.

Keywords

INDUCED TRANSITION
PARALLEL MAGNETIC
DIMENSIONAL HOLE
MAGNETIC FIELD
FIELD INDUCED
RESISTIVITY
HOLE SYSTEM
DILUTE TWO
GAAS

All Related Versions

Version 1, 1999-07-08, ArXiv
Version 2, 1999-07-10, ArXiv
Published version: Physical Review Letters, 84 (19), 4421.

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