Native defect changes in cds single crystal platelets induced by vacuum heat treatments at temperatures up to 600°C
- 1 December 1975
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 36 (12) , 1371-1374
- https://doi.org/10.1016/0022-3697(75)90218-8
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Formation of hexagonal pyramids and hexagonal flat tops on the surface of heteroepitaxial (0001) CdS filmsJournal of Applied Physics, 1974
- Transitions between Class I and Class II CdS Crystals Induced by Heat-Treatment, Oxygen De/Adsorption and Electron BombardmentPhysica Status Solidi (b), 1970
- Semiconductivity of CdS as a function of s-vapor pressure during heat treatment between 500° and 700° CMaterials Research Bulletin, 1969
- The Basic Significance of Oxygen Chemisorption on the Photoelectronic Properties of CdS and CdSeJournal of the Electrochemical Society, 1966
- The energy of desorption of photo-chemisorbed oxygen and nitrous oxide on insulating CdS crystalsJournal of Physics and Chemistry of Solids, 1965
- Charge-Transfer-Controlled Vaporization of Cadmium Sulfide Single Crystals. II. Effect of Copper Doping on the Evaporation Rate of the (0001) FaceThe Journal of Chemical Physics, 1965
- The effects of low temperature heat treatments on the conductivity and photoluminescence of CdSJournal of Physics and Chemistry of Solids, 1965
- The role of chemisorption in current flow in insulating CdS crystalsJournal of Physics and Chemistry of Solids, 1965
- Evaporation Mechanism of CdS Single Crystals. I. Surface Concentration and Temperature Dependence of the Evaporation RateThe Journal of Chemical Physics, 1964
- Photo-induced chemisorption on insulating CdS crystalsJournal of Physics and Chemistry of Solids, 1964