Contactless capacitance–voltage and photoluminescence characterization of ultrathin oxide–silicon interfaces formed on hydrogen terminated (111) surfaces
- 1 July 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (4) , 2872-2881
- https://doi.org/10.1116/1.588847
Abstract
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