Reduction of ohmic contact resistance of AlGaN/GaN HFETs by doping of thermally diffused Si

1 January 2004

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 47-48
https://doi.org/10.1109/imfedk.2004.1566401

Abstract

Low ohmic contact resistance is crucial to realization of good RF and power performances of AlGaN/GaN heterojunction field effect transistors (HFETs). However, with almost universal use of Ti/Al based electrode, usual specific contact resistance (pc) remains only at 1 /spl times/ 10/sup -5/ /spl Omega//spl middot/cm level which is insufficient for the ultimate goal of exceeding the performances of the GaAs based FETs. Therefore, in order to overcome the very high potential barrier of AlGaN, a more aggressive method is required. In this work, we report on a simple but very effective method to reduce the contact resistance by thermal diffusion of Si dopants selectively into the area underneath the contact electrodes. By diffusing Si from the AlGaN surface at 1000/spl deg/C for 30 minutes, a record low /spl rho//sub c/ of 1.2 /spl times/ 10/sup -6/ /spl Omega//spl middot/cm/sup 2/ is realized.

Keywords

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