Tunnel Magnetoresistance for Ferromagnetic Tunnel Junctions: Dependence on Bias Voltage and Barrier Height.
- 1 January 1998
- journal article
- Published by The Magnetics Society of Japan in Journal of the Magnetics Society of Japan
- Vol. 22 (7) , 1150-1153
- https://doi.org/10.3379/jmsjmag.22.1150
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Spin-polarized tunneling and magnetoresistance in ferromagnet/insulator(semiconductor) single and double tunnel junctions subjected to an electric fieldPhysical Review B, 1997
- Transmission Coefficients for Ferromagnetic Tunnel Junctions with Single and Double BarriersJournal of the Magnetics Society of Japan, 1997
- Ferromagnetic–insulator–ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions (invited)Journal of Applied Physics, 1996
- Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel JunctionsPhysical Review Letters, 1995
- Giant magnetic tunneling effect in Fe/Al2O3/Fe junctionJournal of Magnetism and Magnetic Materials, 1995
- Conductance and exchange coupling of two ferromagnets separated by a tunneling barrierPhysical Review B, 1989
- Simple explanation of tunneling spin-polarization of Fe, Co, Ni and its alloysJournal of Magnetism and Magnetic Materials, 1977
- Tunneling in a finite superlatticeApplied Physics Letters, 1973