Hydrogen as a shallow center in semiconductors and oxides
- 23 December 2002
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 235 (1) , 89-95
- https://doi.org/10.1002/pssb.200301539
Abstract
We describe the physics of interstitial hydrogen in semiconductors and oxides based on a first‐principles computational approach. In most semiconductors hydrogen acts as an amphoteric impurity, compensating the prevailing conductivity. In ZnO, however, hydrogen acts a shallow donor. We have developed a general model for the behavior of hydrogen in semiconductors and oxides, and confirmed its predictive nature in the case of InN and GaAsN alloys.Keywords
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