Fabrication of a novel split-backgate transistor by in situ focused ion-beam lithography and molecular-beam epitaxial regrowth
- 1 November 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (6) , 2493-2496
- https://doi.org/10.1116/1.586653
Abstract
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