Photoluminescence in heavily doped Si: B and Si: As
- 30 June 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (11) , 1091-1093
- https://doi.org/10.1016/0038-1098(81)90024-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Energy gap in Si and Ge: Impurity dependenceJournal of Applied Physics, 1980
- On the origin of photoluminescence in heavily-doped siliconSolid State Communications, 1979
- Heavily doped semiconductors and devicesAdvances in Physics, 1978
- Photoluminescence in heavily-doped Si(P)Canadian Journal of Physics, 1978
- Electron-hole droplets and impurity band states in heavily doped Si(P): Photoluminescence experiments and theoryPhysical Review B, 1976
- Radiative Recombination in Highly Doped GermaniumPhysica Status Solidi (b), 1969
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967