An Improved Etched Buried Heterostructure Laser with Reduced Threshold Current

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Abstract
An improved etched buried heterostructure laser was developed for optical read-out purposes. A curved active layer is formed in a V-shaped groove by a single run of the multi-layer LPE growing procedure on an etched substrate. A semiinsulating region to confine current in the lateral direction is formed by proton implantation. A CW threshold current of 15 mA is the lowest attained with a cavity length of 200 µm. The transverse mode is usually fundamental. The single longitudinal mode operation is achieved at 1.2 times the threshold current. The far-field beam shows an aspect ratio of less than 2.5. The uncoated devices have catastrophic damage limit larger than 20 mW/facet in CW operation.

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