Si-Ge solid solution single crystal growth by electron beam floating zone technique
- 1 April 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 52, 514-518
- https://doi.org/10.1016/0022-0248(81)90331-6
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Ge–Si Thermoelectric Power GeneratorJournal of Applied Physics, 1964
- Electrical Properties of Germanium-Silicon AlloysPhysical Review B, 1955