III–V on silicon – achieving the perfect match
- 1 January 1990
- journal article
- other
- Published by IOP Publishing in Physics World
- Vol. 3 (1) , 28-32
- https://doi.org/10.1088/2058-7058/3/1/21
Abstract
For the past 20 years it has been possible to make semiconductors such as GaAs and InP, which are both capable of light emission and have higher carrier speeds then silicon devices. Such 'III–V' devices(so called because the materials comprise equal numbers of atoms from groups III and V of the periodic table) have been developed into microoptoelectronics, and have been fabricated so far on III–V substrates.Keywords
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