The study on hole mobility in the inversion layer of P-channel MOSFET

• 1 November 1985
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
• Vol. 6  (11) , 575-577
• https://doi.org/10.1109/edl.1985.26235

Abstract

Keywords

• MOSFET CIRCUITS
• DOPING
• PARTICLE SCATTERING
• ELECTRON MOBILITY
• ROUGH SURFACES
• SURFACE ROUGHNESS
• DENSITY MEASUREMENT
• TEMPERATURE
• PHONONS
• THRESHOLD VOLTAGE