Time-of-flight studies of minority-carrier diffusion in AlxGa1−xAs homojunctions

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Abstract
A novel time‐of‐flight technique has been developed for simultaneously measuring minority‐carrier lifetime and diffusivity in homojunctions. A pulsed dye laser produces electron‐hole pairs near the front surface of the device. A delay occurs before the onset of photocurrent due to the diffusion transit time of minority carriers to the junction. An analysis of this effect by both a simplified analytical model and a computer simulation gives similar results for the current as a function of time. A fit of the theory to experimental data on Al0.25Ga0.75As n/p homojunctions produces minority‐carrier lifetime, diffusivity, and diffusion length.

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