Local oxidation induced dislocation generation near [100] Si3N4 film edges
- 15 December 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (12) , 1120-1122
- https://doi.org/10.1063/1.94248
Abstract
The generation of dislocations at [100] nitride film edges on (001)Czochralski silicon wafers is studied by means of high voltage electron microscopy. After local oxidation 90° (edge) dislocations forming triangular half‐loops with sides lying in [211̄] and [21̄1] directions in a (011) plane are found. It is observed that the shape of the surface stacking faults is also influenced by the mask orientation and that a denuded zone free from bulk defects is formed at the silicon surface. A novel model to explain the dislocation generation and movement under the influence of the stresses near the Si3N4 film edges is discussed.Keywords
This publication has 5 references indexed in Scilit:
- Generation Mechanism of Dislocations in Local Oxidation of SiliconJournal of the Electrochemical Society, 1980
- Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates and Viscoelastic Behavior of SiO2 FilmsJournal of the Electrochemical Society, 1979
- Influence of film stress and thermal oxidation on the generation of dislocations in siliconApplied Physics Letters, 1978
- Framed Recessed Oxide Scheme for Dislocation‐Free Planar Si StructuresJournal of the Electrochemical Society, 1978
- Dislocation propagation and emitter edge defects in silicon wafersJournal of Applied Physics, 1976