A simple electrical method to determine the Si and oxide thicknesses in SOI materials

1 August 1991

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 12 (8) , 427-429
https://doi.org/10.1109/55.119154

Abstract

It is shown that the thickness of the silicon and oxide layers of a silicon-on-insulator (SOI) structure can be determined from high-frequency capacitance-voltage measurements. The test device consists of a Schottky diode in series with a Si-oxide-Si capacitor. The Si film and the substrate are n-type. The operation of this device is explained for n-type Si with the help of the energy-band diagrams. It is demonstrated that this simple test device can be implemented as a process monitor for silicon thickness control.

Keywords

This publication has 3 references indexed in Scilit:

An electrical method to measure SOI film thicknesses
IEEE Electron Device Letters, 1986
Capacitance-voltage characteristics of Semiconductor-Insulator-Semiconductor (SIS) structure
Solid-State Electronics, 1985
Effect of Semiconductor Thickness on Capacitance-Voltage Characteristics of an MOS Capacitor
Japanese Journal of Applied Physics, 1984