Electronic noise of submicron n+nn+ diodes under near-oscillatory macroscopic behaviors

Abstract
We present a theoretical investigation on the electronic noise of submicron n+nn+ GaAs diode under the conditions when the electrical characteristics of the diode exhibit a pronounced near-oscillatory macroscopic behavior caused by velocity fluctuations of single particles at the microscopic level. Two kinds of spontaneous oscillations, related to transit time and plasma oscillations, and their contributions to the diode noise are investigated by a Monte Carlo simulation. A simple analytical model which provides an excellent fit of the macroscopic features of the noise obtained by the Monte Carlo simulation is developed.

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