Tunneling and Resistive Determinations of the Transition Temperature of Thin Lead Films

Abstract
The transition temperature Tc of a lead film has been determined from both the resistance along the film and from tunnel measurements of an aluminum‐aluninum‐oxide‐lead junction. Tc by resistivity was 7.214°K and from tunneling 7.208°K. The agreement indicates that tunneling measurements may be used for accurate determinations of the transition temperature.

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