GaAs and GaAlAs Reactive Ion Etching in BCl3-Cl2 Mixture
- 1 September 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (9A) , L731
- https://doi.org/10.1143/jjap.23.l731
Abstract
The reactive ion etching of GaAs and GaAlAs in BCl3–Cl2 mixture has been investigated. Under anisotropic etching conditions, clean etch profiles have been obtained with etch rates as high as 0.6 µm/min for GaAs and 0.4 µm/min for Ga0.55Al0.45As. No lag time has been observed between ignition of the gas plasma and subsequent etching. The variation in etch rates from run to run is less than±10%. The etch rates for the organic resist (AZ-1350) are so slow that deeply etched features (4–5 µm) with vertical side-walls have been obtained using a layer of the resist thin enough to maintain its high resolution.Keywords
This publication has 4 references indexed in Scilit:
- GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching SystemJapanese Journal of Applied Physics, 1983
- Aluminum Reactive Ion Etching Employing CCl4+Cl2 MixtureJapanese Journal of Applied Physics, 1982
- Comparison of Aluminum Etch Rates in Carbon Tetrachloride and Boron Trichloride PlasmasJournal of the Electrochemical Society, 1981
- Plasma etching of III–V compound semiconductor materials and their oxidesJournal of Vacuum Science and Technology, 1981