Low noise 20 Gbit/s photoreceiver with distributedGaAs P-HEMT amplifiers

29 August 1996

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 32 (18) , 1693-1694
https://doi.org/10.1049/el:19961094

Abstract

20 Gbit/s photoreceivers have been realised by cascading three distributed pre-amplifiers purposely designed and processed with a GaAs PHEMT 0.2 µm gate length technology. The bandwidth is 16 GHz, and an average equivalent input noise as low as 12 pA/√Hz up to 14 GHz is obtained. The transimpedance is 63 dBΩ.

Keywords

DISTRIBUTED HEMT AMPLIFIERS
P-HEMT AMPLIFIERS
GAAS
0.2 MICRON
CASCADED AMPLIFIERS
20 GBIT/S
16 GHZ
LOW NOISE PHOTORECEIVER
DISTRIBUTED PREAMPLIFIERS
GAAS PHEMT

This publication has 2 references indexed in Scilit:

Potential of the distributed amplifier as a photo-diode detector amplifier in high bit rate optical communication systems
Electronics Letters, 1990
The Intrinsic Noise Figure of the MESFET Distributed Amplifier
IEEE Transactions on Microwave Theory and Techniques, 1985