Lattice Thermal Conductivity ofp-Type GaSb in the Temperature Range 2-20 °K

In the present paper the resonance-scattering relaxation rate for the electron-phonon interaction as given by Kumar et al. is used in the calculation of the resonance scattering of phonons by bound holes in $p$-type GaSb in the temperature range 2-20 °K. The present calculations show that with the simplified expressions of Kumar et al. for resonance scattering of phonons by bound electrons for $\omega >{\omega }_r$ and $\omega <{\omega }_r$, one can explain the anomalous resonance dip in the phonon-conductivity-vs-temperature curves of $p$-doped GaSb. An excellent agreement between theoretical and experimental values of phonon conductivity is obtained for the entire temperature range 2-20 °K on the basis of Callaway's model of phonon conductivity, provided one incorporates separate conductivity integrals for $0<\mathrm{}\omega <{\omega }_r$ and ${\omega }_r<\omega <{\omega }_D$, where ${\omega }_r$ is the resonance frequency and ${\omega }_D$ is the Debye frequency.