Observation of correlation effects in the hopping transport in amorphous silicon
- 1 August 1985
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 52 (2) , 153-168
- https://doi.org/10.1080/01418638508244278
Abstract
Amorphous silicon films have been modified by the implantation of Au or Si ions. The d.c. conductivity, measured between 300 and 15 K, was found to exhibit hopping exponents m which increase with decreasing temperature. Depending on the varied defect densities, m ranges between the limits of 1/4 and 1. These results can be explained by variable-range-hopping theory, if a Coulomb correlation term is included.Keywords
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